Phase-compensated FET attenuator

Details Phase-compensated FET attenuator Phase-compensated FET attenuator

1986-01-13

1987-10-13

Laroche, Eugene R.

Wave transmission lines and networks

Attenuators

307511, 307262, 307264, 307568, H03H 725

Patent

active

047001534

ABSTRACT:
A dual gate MESFET attenuator circuit provides substantial range of attenuation without phase shift through a cascaded arrangement of a pair of dual gate MESFETs and the incorporation of a feed forward resistor. By cascading the two transistors together, the attenuation vector characteristics are effectively rotated 180.degree. or shifted to the third and fourth quadrants of the (real/imaginary) vector plane. The resulting phase shift between the minimum attenuation vector and the maximum attenuation vector is compensated by the insertion of a pure resistance component in a feed forward fashion between the input and output terminals of the cascaded dual MESFET pair. The value of the inserted resistor is chosen so as to effectively make both the maximum attenuation vector and the minimum attenuation vector cophasal, thereby providing a constant phase shift through the attenuator over a substantial range of attenuation.

REFERENCES:
patent: 3369129 (1968-02-01), Wolterman
patent: 3539909 (1970-11-01), Morrison
patent: 3649847 (1972-03-01), Limberg
patent: 3652959 (1972-03-01), Denny
patent: 3747031 (1973-07-01), Ohm
patent: 4092617 (1978-05-01), Titus
patent: 4511813 (1985-04-01), Pan
Mondal et al; "Phase Shifts in Single and Dual Gate GaAs MESFET for 2-4 GHz Quadrature Phase Shifters"; IEEE Transactions on Microwave Theory and Techniques; vol. MTT32, No. 10, 10/1984, pp. 1280-1287.

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