Phase-changeable memory devices including phase-changeable...

Details Phase-changeable memory devices including phase-changeable... Phase-changeable memory devices including phase-changeable...

2008-06-27

2010-06-22

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

07741631

ABSTRACT:
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.

REFERENCES:
patent: 6744088 (2004-06-01), Dennison
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2003/0127669 (2003-07-01), Doan et al.
patent: 2003/0209746 (2003-11-01), Horii
patent: 2004/0004237 (2004-01-01), Fox
patent: 2004/0023489 (2004-02-01), Chopra
patent: 10-2003-0086820 (2003-11-01), None
patent: 10-2004-0017694 (2004-02-01), None
patent: 10-2004-0017695 (2004-02-01), None
Notice to Submit a Response for Korean Patent Application No. 10-2004-0064712 mailed Mar. 16, 2006.

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