Phase changeable memory devices having reduced cell areas

Details Phase changeable memory devices having reduced cell areas Phase changeable memory devices having reduced cell areas

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S248000

Reexamination Certificate

active

06849892

ABSTRACT:
Phase changeable memory devices include an integrated circuit substrate and first and second storage active regions on the integrated circuit substrate. The first and second storage active regions have a first width and a second width, respectively. A transistor active region on the integrated circuit substrate is between the first and second active regions, the first and seconds widths being less than a width of the transistor active region.

REFERENCES:
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 6030548 (2000-02-01), Kuriyama
patent: 6545903 (2003-04-01), Wu
patent: 6733956 (2004-05-01), Maimon et al.

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