Phase-changeable memory devices having reduced...

Details Phase-changeable memory devices having reduced... Phase-changeable memory devices having reduced...

2011-07-12

2011-07-12

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S004000, C257S311000, C257S510000, C257S903000, C257SE29141, C257SE29170, C365S148000

Reexamination Certificate

active

07977662

ABSTRACT:
A non-volatile memory array includes an array of phase-changeable memory elements that are electrically insulated from each other by at least a first electrically insulating region extending between the array of phase-changeable memory elements. The first electrically insulating region includes a plurality of voids therein. Each of these voids extends between a corresponding pair of phase-changeable memory cells in the non-volatile memory array and, collectively, the voids form an array of voids in the first electrically insulating region.

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patent: 2006/0110888 (2006-05-01), Cho et al.
patent: 2007/0131980 (2007-06-01), Lung
patent: 2009/0101883 (2009-04-01), Lai et al.
patent: 1020030080843 (2003-10-01), None
patent: 1020050001169 (2005-01-01), None
patent: 1020060034530 (2006-04-01), None

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