Phase changeable memory devices

Details Phase changeable memory devices Phase changeable memory devices

2006-10-03

2006-10-03

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S002000, C257S003000, C257S004000, C257S202000, C257S211000, C257S246000, C257S247000, C257S248000, C257S257000, C257S298000, C257S758000

Reexamination Certificate

active

07115927

ABSTRACT:
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.

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Notice to File Response/Amendment to the Examination Report, Korean App. No. 10-2004-0012358, Dec. 21, 2005.

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