Phase-changeable memory device and method of manufacturing...

Details Phase-changeable memory device and method of manufacturing... Phase-changeable memory device and method of manufacturing...

2007-11-13

2007-11-13

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C257S002000, C257S004000

Reexamination Certificate

active

11055094

ABSTRACT:
A phase changeable random access memory (PRAM) and methods for manufacturing the same. An example unit cell of a non-volatile memory, such as a PRAM, includes a MOS transistor, connected to an address line and a data line, where the MOS transistor receives a voltage from the data line. The unit cell further includes a phase change material for changing phase depending on heat generated by the voltage and a top electrode, connected to a substantially ground voltage.

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