Phase changeable memory device and method of formation thereof

Semiconductor device manufacturing: process – Making passive device – Resistor

Reexamination Certificate

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C438S381000, C438S383000, C438S384000

Reexamination Certificate

active

07419881

ABSTRACT:
In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern penetrating the insulating pattern and the lower electrode pattern to contact the lower electrode pattern and the interlayer insulating layer; and an upper electrode on the phase changeable pattern.

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patent: 2004-158854 (2004-06-01), None
patent: 10-2004-0032955 (2004-04-01), None
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patent: 10-2004-0047272 (2004-06-01), None

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