Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2008-09-02
2008-09-02
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S381000, C438S383000, C438S384000
Reexamination Certificate
active
11252807
ABSTRACT:
In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern penetrating the insulating pattern and the lower electrode pattern to contact the lower electrode pattern and the interlayer insulating layer; and an upper electrode on the phase changeable pattern.
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Byun Kyung-Rae
Cho Byeong-Ok
Joo Suk-Ho
Ryoo Kyung-Chang
Green Telly D
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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