Phase-changeable devices having an insulating buffer layer...

Details Phase-changeable devices having an insulating buffer layer... Phase-changeable devices having an insulating buffer layer...

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000, C438S095000, C438S098000

Reexamination Certificate

active

06841793

ABSTRACT:
Phase-changeable devices and method of fabricating phase-changeable devices are provided. The phase-changeable devices have a first insulating layer disposed on a first electrode. A heater plug extends through the first insulating layer and contacts the first electrode. A buffer insulating layer region is disposed on the first insulating layer opposite the first electrode and a phase-changeable material region is disposed on the buffer insulating layer region. The phase-changeable material region may extend into the buffer insulating layer region. The phase-changeable material region contacts a surface of the heater plug. A second electrode disposed on the phase-changeable material region. Spacers may be provided on sidewalls of the buffer insulating layer region between the phase-changeable material region and the buffer insulating layer region. The buffer insulating layer region may have a thermal expansion coefficient between the thermal expansion coefficients of the first insulating layer and the phase-changeable material region.

REFERENCES:
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5789758 (1998-08-01), Reinberg

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