Phase change storage cells for memory devices, memory...

Details Phase change storage cells for memory devices, memory... Phase change storage cells for memory devices, memory...

2006-06-13

2006-06-13

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

C257S537000, C365S148000

Reexamination Certificate

active

07061013

ABSTRACT:
Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist phase change material pattern has a higher resistance than the first phase change material pattern. Methods of fabricating such storage cells and/or memory devices are also provided.

REFERENCES:
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 2003/0006535 (2003-01-01), Hennessey et al.
patent: 2004/0038445 (2004-02-01), Lowrey et al.
patent: 2004/0113137 (2004-06-01), Lowrey
patent: KO 1999-67038 (1999-08-01), None
Notice to File a Response for Korean Application No. 10-2003-0013416 mailed on Mar. 31, 2005.

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