Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2009-11-23
2011-11-08
Ha, Nathan (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002
Reexamination Certificate
active
08053751
ABSTRACT:
In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
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Kim Kyung-Hyun
Kim Tae-Won
Ko Yong-Sun
Park Ki-Jong
Ha Nathan
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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