Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-10
2010-06-29
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S238000, C438S702000, C257S004000
Reexamination Certificate
active
07745341
ABSTRACT:
In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
REFERENCES:
patent: 5869843 (1999-02-01), Harshfield
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6579760 (2003-06-01), Lung
patent: 2005/0029503 (2005-02-01), Johnson
patent: 2005/0062087 (2005-03-01), Chen et al.
patent: 2005/0263801 (2005-12-01), Park et al.
patent: 2006/0011902 (2006-01-01), Song et al.
patent: 2006/0175599 (2006-08-01), Happ
patent: 2006/0273297 (2006-12-01), Happ
patent: 2007/0069402 (2007-03-01), Johnson
patent: 2007/0190696 (2007-08-01), Happ
patent: 2007/0197664 (2007-08-01), Steiner et al.
patent: 07-074175 (1995-03-01), None
patent: 10-0426000 (2004-03-01), None
patent: 1020050009426 (2005-01-01), None
Kim Kyung-Hyun
Kim Tae-Won
Ko Yong-Sun
Park Ki-Jong
Chen Kin-Chan
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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