Phase change resistor cell and nonvolatile memory device...

Details Phase change resistor cell and nonvolatile memory device... Phase change resistor cell and nonvolatile memory device...

2006-12-05

2006-12-05

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S175000

Reexamination Certificate

active

07145790

ABSTRACT:
A nonvolatile memory device features a phase change resistor cell. The nonvolatile memory device using a phase change resistor cell comprises a plurality of phase change resistor cell arrays, a plurality of word line driving units and a plurality of sense amplifiers. Each of the plurality of phase change resistor cell arrays includes unit phase change resistor cells, and each unit phase change resistor cell is located where a word line and a bit line are crossed in row and column directions. The plurality of word line driving units selectively drive the word lines. The plurality of sense amplifiers sense and amplify data transmitted through the bit lines. Here, the unit phase change resistor cell comprises a phase change resistor and a hybrid switch. The phase change resistor stores a logic data value corresponding to a resistance sate changed by a crystallization state of a phase change material depending on the amount of current supplied from a word line. The hybrid switch is connected between the phase change resistor and a bit line, and selectively switched depending on a voltage applied to the word line and the bit line. As a result, a cross-point cell array is embodied, and the whole chip size is reduced.

REFERENCES:
patent: 3569945 (1971-03-01), Ho
patent: 6956767 (2005-10-01), Kang

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