Phase change random access memory (PRAM) device

Details Phase change random access memory (PRAM) device Phase change random access memory (PRAM) device

2005-12-23

2009-12-29

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S230030, C365S203000, C365S204000, C365S163000, C365S148000, C365S051000, C365S063000, C365S072000

Reexamination Certificate

active

07639558

ABSTRACT:
A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.

REFERENCES:
patent: 6731535 (2004-05-01), Ooishi et al.
patent: 6778421 (2004-08-01), Tran
patent: 6781860 (2004-08-01), Parkinson
patent: 7027342 (2006-04-01), Inoue
patent: 7227776 (2007-06-01), Cho et al.
patent: 2007/0133271 (2007-06-01), Cho et al.
patent: 100300042 (2001-06-01), None

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