Phase change random access memory device having variable...

Details Phase change random access memory device having variable... Phase change random access memory device having variable...

2007-10-16

2007-10-16

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S189090, C365S226000

Reexamination Certificate

active

11316256

ABSTRACT:
A phase change memory device includes a memory array including a plurality of phase change memory cells, each phase change memory cell including a phase change material and a diode, a plurality of column selection transistors connecting bit lines connected to the phase change memory cells to corresponding data lines, and a control node connecting the data lines to a sense amplifier unit. In a write operation mode, control voltages obtained by boosting a first voltage are respectively applied to the control node and gates of the column selection transistors, and a ground voltage is applied to a word line of a selected one of the phase change memory cells. In a standby mode, word lines and bit lines connected to the phase change memory cells of the memory array are maintained at the same voltage. According to the phase change memory device and a driving method thereof, a sufficient write voltage is supplied to a write driver, a column decoder and a row decoder in the write operation mode, and a voltage lower is applied to the write driver, the column decoder and the row decoder in the read operation mode and the standby mode, thereby reducing current consumption and enhancing operational reliability.

REFERENCES:
patent: 6522594 (2003-02-01), Scheuerlein
patent: 6567296 (2003-05-01), Casagrande et al.
patent: 7092277 (2006-08-01), Bedeschi et al.
patent: 7099180 (2006-08-01), Dodge et al.
patent: 7154774 (2006-12-01), Bedeschi et al.
patent: 2002/0136047 (2002-09-01), Scheuerlein
patent: 2003/0123284 (2003-07-01), Lowrey et al.
patent: 2003/0198118 (2003-10-01), Lowery
patent: 2004/0027908 (2004-02-01), Ooishi et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0030814 (2005-02-01), Oh et al.
patent: 2006/0221734 (2006-10-01), Bedeschi et al.
patent: 2004-079002 (2004-03-01), None
patent: 2004-110867 (2004-04-01), None
patent: 10-2004-0074088 (2004-08-01), None

Affiliated with

Also associated with

Rating

Phase change random access memory device having variable... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change random access memory device having variable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change random access memory device having variable... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3832936