Phase-change random access memory device and method of...

Details Phase-change random access memory device and method of... Phase-change random access memory device and method of...

2011-07-19

2011-07-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S238000, C438S381000, C438S680000, C438S700000, C257SE21006, C257SE21170, C257SE21229, C257SE21267, C257SE21275, C257SE21314, C257SE21346

Reexamination Certificate

active

07981797

ABSTRACT:
A method of manufacturing a phase-change random access memory device includes forming an interlayer insulating film on a semiconductor substrate, on which a bottom structure is formed, and patterning the interlayer insulating film to form a contact hole, forming a spacer on the side wall of the contact hole; forming a dielectric layer in the contact hole, and removing the spacer to form a bottom electrode contact hole. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized.

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