Phase change random access memory device

Details Phase change random access memory device Phase change random access memory device

2005-12-27

2009-12-15

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S260000

Reexamination Certificate

active

07633100

ABSTRACT:
A phase-change random access memory device includes a global bit line connected to a write circuit and a read circuit; a plurality of local bit lines, each of which being connected to a plurality of phase-change memory cells; and a plurality of column select transistors selectively connecting the global bit line with each of the plurality of local bit lines. Each column select transistor has a resistance that depends on distance from the write circuit and the read circuit.

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