Phase-change random access memory and method of...

Details Phase-change random access memory and method of... Phase-change random access memory and method of...

2011-08-23

2011-08-23

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000

Reexamination Certificate

active

08003970

ABSTRACT:
Provided is a phase-change random access memory (PRAM). The PRAM includes a bottom electrode, a bottom electrode contact layer, which is formed on one area of the bottom electrode, and an insulating layer, which is formed on a side of the bottom electrode contact layer, a phase-change layer, which is formed on the bottom electrode contact layer and the insulating layer and is formed of a phase-change material having a crystallization temperature between 100° C. and 150° C., and a top electrode, which is formed on the phase-change layer.

REFERENCES:
patent: 6706585 (2004-03-01), Uchiyama et al.
patent: 2004/0109351 (2004-06-01), Morimoto et al.
patent: 2007/0003730 (2007-01-01), Kojima et al.
patent: 2008/0164452 (2008-07-01), Joseph et al.
patent: 2009/0003174 (2009-01-01), Tsuchino et al.
patent: 2009/0029534 (2009-01-01), Czubatyi et al.
“GeSbTe deposition for PRAM application” by Junghyun Lee, Oct. 2006. Applied Surface Science 253 (2007) 3969-3976.
(“Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5 thin film for PRAM application” Science Direct Thin Solid Films 515 (2007 5049-5033. Nov. 2006.
(“Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5 thin film for PRAM application” Science Direct Thin Solid Films 515 (2007 5049-5033)) by Park et al.

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