Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2006-09-12
2006-09-12
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000
Reexamination Certificate
active
07106623
ABSTRACT:
A phase-change multi-level memory cell is described, including a semiconductor substrate, a gate structure, two S/D regions, and two phase-change storing units electrically connected to the two S/D regions respectively. One phase-change storing unit can be programmed to one of many phases having different electrical resistances, and combination variations of the phases of the two phase-change storing units generate different read currents corresponding to 2nn-bit data values (n≧2). To program the cell, the phase of each phase-change storing unit is changed to one of the many phases mentioned above, so that the phase combination of the two phase-change storing units corresponds to a predetermined data value. In addition, when reading the memory cell, the read current is measured to obtain the data value stored.
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Hung Jen-Ren
Lai Erh-Kun
Jianq Chyun IP Office
MACRONIX International Co. Ltd.
Phung Anh
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