Phase change memory with tapered heater

Details Phase change memory with tapered heater Phase change memory with tapered heater

2011-03-15

2011-03-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C257SE27004, C438S103000

Reexamination Certificate

active

07906368

ABSTRACT:
An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.

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