Phase change memory with tapered heater

Details Phase change memory with tapered heater Phase change memory with tapered heater

2011-03-22

2011-03-22

Ghyka, Alexander G (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S102000, C257S536000

Reexamination Certificate

active

07910911

ABSTRACT:
An embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.

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Y.H. Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 175-176.
H. Horii et al., “A Novel Cell Technology Using N-Doped GeSbTe Films for Phase Change RAM,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 177-178.

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