Phase change memory with tapered heater

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S102000, C257S536000

Reexamination Certificate

active

07910911

ABSTRACT:
An embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.

REFERENCES:
patent: 6114713 (2000-09-01), Zahorik
patent: 6228668 (2001-05-01), Silverbrook
patent: 6287919 (2001-09-01), Zahorik
patent: 2003/0189200 (2003-10-01), Lee et al.
patent: 2004/0197947 (2004-10-01), Fricke et al.
patent: 2006/0169968 (2006-08-01), Happ
patent: 2007/0096162 (2007-05-01), Happ et al.
Park “Writing Current Reduction in Phase Change Memory Device with U-shaped Heater (PCM-U)”, Japanese Journal of Applied Physics, vol. 45, No. 20, 2006, pp. L516-L518.
S. Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications,” IEDM 2001, pp. 36.5.1-36.5.4.
S. Lai, “Current Status of Phase Change Memory and Its Future,” IEDM 2003, pp. 10.1.1-10.1.4.
Y.H. Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 175-176.
H. Horii et al., “A Novel Cell Technology Using N-Doped GeSbTe Films for Phase Change RAM,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 177-178.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Phase change memory with tapered heater does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory with tapered heater, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory with tapered heater will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2681246

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.