Phase-change memory using single element semimetallic layer

Details Phase-change memory using single element semimetallic layer Phase-change memory using single element semimetallic layer

2008-06-17

2010-10-05

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE27078, C257SE27084, C438S200000, C438S266000

Reexamination Certificate

active

07807989

ABSTRACT:
Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.

REFERENCES:
patent: 7453081 (2008-11-01), Happ et al.
patent: 7457146 (2008-11-01), Philipp et al.
patent: 2007/0181932 (2007-08-01), Happ et al.

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