Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-05-31
2011-05-31
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C977S754000
Reexamination Certificate
active
07952919
ABSTRACT:
A phase change memory structure with multiple resistance states and methods of forming, programming, and sensing the same. The memory structure includes two or more phrase change elements provided between electrodes. Each phase change element has a respective resistance curve as a function of programming voltage which is shifted relative to the resistance curves of other phase change elements. In one example structure using two phase change elements, the memory structure is capable of switching among four resistance states.
REFERENCES:
patent: 5982659 (1999-11-01), Irrinki et al.
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6881623 (2005-04-01), Campbell et al.
patent: 6888155 (2005-05-01), Campbell
patent: 2003/0137869 (2003-07-01), Kozicki
patent: 2006/0077706 (2006-04-01), Li et al.
patent: 2006/0097239 (2006-05-01), Hsiung
patent: 2007/0008768 (2007-01-01), Daley
patent: 1 249 841 (2002-10-01), None
patent: 1 416 497 (2004-05-01), None
“Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory,” to Bo Liu et al., Institute of Physics Publishing Semiconductor Science and Technology No. 19, Apr. 24, 2004, L61-L64.
Matsuzaki, N. et al., “Oxygen-Doped GeSbTe Phase-Change Memory Cells Featuring 1.5—V/100-μA Standard 0.13-μm CMOS Operations”, Electron Devices Meeting, Dec. 5, 2005, IEEE.
Kim, S. M. et al., “Electrical Properties and Crystal Structures of Nitrogen-Doped Ge2Sb2Te5Thin Film for Phase Change Memory”, Thin Solid Films, vol. 469-470, Dec. 22, 2004, pp. 322-326.
Y. Lai, et al.; “Stacked Chalcogenide Layers Used As Multi-State Storage Medium for Phase Change Memory”; Applied Physics A 84,; 21-25 (2006).
Liu Jun
Violette Mike
Byrne Harry W
Dickstein & Shapiro LLP
Elms Richard
Micro)n Technology, Inc.
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