Phase change memory having temperature budget sensor

Details Phase change memory having temperature budget sensor Phase change memory having temperature budget sensor

2006-05-18

2008-12-02

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S189070, C365S189060, C365S211000, C365S113000, C365S148000

Reexamination Certificate

active

07460394

ABSTRACT:
A semiconductor device includes a plurality of memory cells, a temperature budget sensor, and a circuit. The circuit periodically compares a signal from the temperature budget sensor to a reference signal and refreshes the memory cells based on the comparison.

REFERENCES:
patent: 3975951 (1976-08-01), Kohama et al.
patent: 5784328 (1998-07-01), Irrinki et al.
patent: 6625054 (2003-09-01), Lowrey et al.
patent: 6636937 (2003-10-01), Peter
patent: 6768665 (2004-07-01), Parkinson et al.
patent: 7020014 (2006-03-01), Khouri et al.
patent: 7027343 (2006-04-01), Sinha et al.
patent: 7177218 (2007-02-01), Choi et al.
patent: 2004/0022085 (2004-02-01), Parkinson et al.
patent: 2004/0151023 (2004-08-01), Khourl
patent: 2006/0261879 (2006-11-01), Willis
patent: 2007/0253238 (2007-11-01), Resta et al.
patent: 10040890 (2002-01-01), None
patent: 102005001668 (2006-03-01), None
patent: 1420412 (2004-05-01), None
patent: 1460637 (2004-09-01), None
patent: 1717817 (2006-02-01), None
patent: 2000011670 (2000-01-01), None
patent: 2004013862 (2004-02-01), None
patent: 2004013862 (2004-02-01), None
Stefan Lai et al., OUM—A 180nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications, International Electron Devices Meeting Technical Digest, Washington D.C., USA, Dec. 2-5, 2001.
Itrl, A. et al., “Analysis Of Phase-Transformation Dynamics And Estimation Of Amorphous-Chalcogenide Fraction In Phase-Change Memories,” 7 pgs. IRPS, 2004.
Redaelli, A. et al., “Impact Of Crystallization Statistics On Data Retention For Phase Change Memories,” 4 pgs. IEDM, 2005.
Cho, S.L. et al., “Highly Scalable On-Axis Confined Cell Structure For High Density PRAM Beyond 256 Mb,” 2 pgs., VLSI, 2005.
Lai, S. et al., “OUM-A 180nm Nonvolatile Memory Cell Element Technology For Stand Alone And Embedded Applications,” 4 pgs., IEDM 2001.
Lai, S. et al., “Current Status Of The Phase Change Memory And Its Future,” pp. 10.1.1-10.1.4, IEDM 2003.
Hori, H. et al., A Novel Cell Technology Using N-doped GeSb Te Films For Phase Change RAM.

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