Phase change memory for archival data storage

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Reexamination Certificate

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C430S270120

Reexamination Certificate

active

07541081

ABSTRACT:
A structure for storing digital data is provided, with a high reflectance layer comprising a noble metal formed over an underlying material layer, and a plurality of low reflectance portions comprising a mixture of a noble metal and an underlying material. The plurality of low reflectance portions have top surfaces comprising a compound of the underlying and the noble metal. A method of changing reflectance on a data storage disk is also disclosed. The method comprises the acts of irradiating a laser light beam onto a noble metal formed over an underlying layer, and raising the temperature of the noble metal above the melting temperature forming a compound of the noble metal and the underlying material.

REFERENCES:
patent: 4461807 (1984-07-01), Mori et al.
patent: 4499178 (1985-02-01), Wada et al.
patent: 4772897 (1988-09-01), Ohkawa
patent: 4816841 (1989-03-01), Kobayashi et al.
patent: 5458941 (1995-10-01), Hintz
patent: 5796708 (1998-08-01), Ohkawa et al.
patent: 6033752 (2000-03-01), Suzuki et al.
patent: 2005/0047306 (2005-03-01), Inoue et al.
patent: 2005/0164040 (2005-07-01), Yoshitoku et al.
patent: 2005/0213477 (2005-09-01), Kato et al.
patent: 2008/0063848 (2008-03-01), Chang et al.
patent: 1 457 977 (2004-09-01), None
patent: 60-171236 (1994-06-01), None
patent: 2000/285509 (2000-10-01), None
patent: 2003/200663 (2003-07-01), None
Grigorievl et al., “Phase Diagrams Solid Surface (AuSi Sample) Studied by SEM and Photoluminescence”, APS User's Meeting 2004, NSLS User's Meeting 2004.
Brillson et al., “Photoemission Studies of Atomic Redistribution at Gold-Silicon and Aluminum-Silicon Interfaces”, Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films, vol. 2, Issue 2, pp. 551-555, Apr. 1984.
Bokhonov et al., “In Situ Investigation of Stage of the Formation of Eutectic Alloys in Si-Au and Si-Al Systems”, Journal of Alloys and Compounds 312, p. 238, 2000.
Tiensuu et al., “Assembling Three-Dimensional Microstructures Using Gold-Silicon Eutectic Bonding”, Sensors and Actuators A 45, p. 227, 1994.
Muemmler et al., “Ellipsometrical Studies on the Au/Si (111) System”, Thin Solid Films 317, p. 193, 1998.
Zhimov et al., “Field Emission Properties of Au-Si Eutectic”, Applied Surface Science 144, pp. 94-95, 1996.
Wolffenbuttel et al., “Low-Temperature Silicon Wafer-to-Wafer Bonding Using Gold at Eutectic Temperature”, Sensors and Actuators A 43, p. 223-29, 1994.
Waghorne et al., “Structure of Liquid Alloys of the Au-Si and Au-Ge Systems”, Journal of Physics F :Metal Physics, vol. 6, No. 2, p. 147, 1976.
Kennedy et al., “Au-Si Eutectic Alloy Formation by Si Implantation in Polycrystalline Au”, Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms) 171, p. 325, 2000.
Naidich et al., “The Wettability of Silicon Carbide by Au-Si Alloys”, Materials Science and Engineering A245, p. 293, 1998.
Brueggemann et al, “Electrical and Optical Properties of Melting Au/Si Eutectics on Si (111)”, Fresenius' Journal of Analytical Chemistry, 358, p. 179-81, 1997.
Cheng et al., “Localized Silicon Fusion and Eutectic Bonding for MEMS Fabrication and Packaging”, Journal of Microelectromechanical Systems, vol. 9, No. 1, p. 3, 2000.
Demortier et al., “3D Characterization of the Eutectic Au-Si Alloy by Using a Nuclear Microprobe”, Scanning, 13, p. 350, 1991.
Anantatmula et al., “The Gold-Silicon Phase Diagram”, Journal of Electronic Materials, vol. 4, No. 3, p. 445, 1975.
Kato, “Eutectic Reactions and Textures of Au-Si Alloy Films on Single-Crystal Silicon”, Japanese Journal of Applied Physics, Part 1 (Regular Papers and Short Notes), vol. 28, No. 6, p. 953-56, 1989.
Mencinger et al., “Use of Wetting Angle Measurements in Reliability Evaluations of Au-Si Eutectic Die Attach”, 23 Annual Proceedings Reliability Physics 1985 (IEEE Cat. No. 85CH2113-9), p. 173, 1985.
Tu et al., “Wetting of Quartz Surfaces by Au-Si Eutectic Melt (MOS Structures)”, Journal of Applied Physics, vol. 48, No. 1, p. 420, 1977.
Johnson et al., “Determination of the Solubility of Silicon in Gold and the Gold-Silicon Eutectic Composition Using a New Quantitative Metallographic Technique”, Scripta Metallurgica 21, p. 1689-92, 1987.
Dutchak et al., “Character of the Atomic Ordering in Eutectic Au-Si and Al-Si Alloys”, Soviet Physics Journal, p. 122, 1975.
Johnson et al., “Surface Cracking in Gold-Silicon Alloys”, Solid-State Electronics, vol. 21, No. 12, p. 1107-09, 1984.
Dutchak et al., “X-ray Investigation of Some Eutectic Alloys in the Liquid State”, Acta Crystallographica, Section A (Crystal Physics, Deffraction, Theoretical and General Crystallography), A28, S127, 1972.
Hafner, “Even Digital Memories Can Fade”, New York Times, Nov. 10, 2004, http://www.nytimes.com/2004/11/10/technology/10archive.html?ex=1101100029&ei=1&en=d5005d5423e465d5.
Moller et al., “A Polymer/Semiconductor Write-Once Read-Many-Times Memory”, Nature, vol. 426, No. 6963, pp. 166-169, Nov. 13, 2003.
Kalbitzer, “Novel Concepts for Mass Storage of Archival Data”, Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol. 218, Jun. 2004, pp. 343-354, Twelfth International Conference on Radiation Effects in Insulators, Gramado, Brazil, Aug. 31-Sep. 5, 2003.
Chang et al., Transmission Electron Microscopy of Gold-Silicon Interactions on the Backside of Silicon Wafers, Journal of Applied Physics 63(5), pp. 1473-1477, Mar. 1, 1998.
Grigoriev et al., “Surface Structure Study of Liquid Eutectic Alloys: AuSi and AuGe”, presented at APS users meeting, Argonne National Laboratory, May 2004.
Huber et al., “Optical properties of laser-melt-quenched Au-Si alloys”, Phys. Rev. B28, 2979-2984 (1983), Issue 6, Sep. 15, 1983, © 1983 American Physical Society.

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