Phase change memory fabricated using self-aligned processing

Details Phase change memory fabricated using self-aligned processing Phase change memory fabricated using self-aligned processing

2006-03-02

2009-02-24

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07495946

ABSTRACT:
A memory includes transistors in rows and columns providing an array and conductive lines in columns across the array. The memory includes phase change elements contacting the conductive lines and self-aligned to the conductive lines. Each phase change element is coupled to one side of a source-drain path of a transistor.

REFERENCES:
patent: 5838038 (1998-11-01), Takashima et al.
patent: 6194759 (2001-02-01), Sano et al.
patent: 6545903 (2003-04-01), Wu
patent: 6579760 (2003-06-01), Lung
patent: 6750101 (2004-06-01), Lung
patent: 6853591 (2005-02-01), Schreck
patent: 6894305 (2005-05-01), Yi et al.
patent: 7208751 (2007-04-01), Ooishi
patent: 7324365 (2008-01-01), Schwerin et al.
patent: 2004/0051094 (2004-03-01), Qoishi
patent: 2005/0036364 (2005-02-01), Ha et al.
patent: 2005/0242338 (2005-11-01), Hart et al.
patent: 2007/0099377 (2007-05-01), Happ et al.
patent: 1495904 (2004-05-01), None
patent: 1702883 (2005-11-01), None
patent: 10 2004 014 487 (2005-11-01), None
S.J. Ahn et al., “Highly Manufacturable High Density Phase Change Memory of 64 Mb and Beyond”, IEDM 2004.
H. Horrii et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, VLSI, 2003.
Y.N. Hwang et al., “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 μm-CMOS Technologies”, VLSI, 2003.
Stefan Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, IEDM, 2001.
Y.H. Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, VLSI, 2003.
F. Pellizzer et al., “Novel μTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications”, VLSI, 2004.
“Chinese Office Action mailed Aug. 29, 2008”.

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