Phase change memory fabricated using self-aligned processing

Details Phase change memory fabricated using self-aligned processing Phase change memory fabricated using self-aligned processing

2008-04-22

2008-04-22

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S113000

Reexamination Certificate

active

11366151

ABSTRACT:
A memory includes transistors in rows and columns providing an array, first conductive lines in columns across the array, and second conductive lines encapsulated by dielectric material in rows across the array. Each second conductive line is coupled to one side of the source-drain path of the transistors in each row. The memory includes phase change elements between the second conductive lines and contacting the first conductive lines and self-aligned to the first conductive lines. Each phase change element is coupled to the other side of the source-drain path of a transistor.

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