Phase change memory fabricated using self-aligned processing

Details Phase change memory fabricated using self-aligned processing Phase change memory fabricated using self-aligned processing

2008-01-29

2008-01-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

11366370

ABSTRACT:
A memory includes transistors in rows and columns providing an array, conductive lines in columns across the array, and phase change elements contacting the conductive lines and self-aligned to the conductive lines. The memory includes bottom electrodes contacting the phase change elements, each bottom electrode self-aligned to a conductive line and coupled to one side of a source-drain path of a transistor.

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