Phase change memory fabricated using self-aligned processing

Details Phase change memory fabricated using self-aligned processing Phase change memory fabricated using self-aligned processing

2008-01-29

2008-01-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

07324365

ABSTRACT:
A memory includes transistors in rows and columns providing an array, conductive lines in columns across the array, and phase change elements contacting the conductive lines and self-aligned to the conductive lines. The memory includes bottom electrodes contacting the phase change elements, each bottom electrode self-aligned to a conductive line and coupled to one side of a source-drain path of a transistor.

REFERENCES:
patent: 6531373 (2003-03-01), Gill et al.
patent: 6545903 (2003-04-01), Wu
patent: 6579760 (2003-06-01), Lung
patent: 6750101 (2004-06-01), Lung
patent: 6816404 (2004-11-01), Khouri et al.
patent: 6894305 (2005-05-01), Yi et al.
patent: 7208751 (2007-04-01), Ooishi
patent: 2005/0036364 (2005-02-01), Ha et al.
patent: 2005/0242338 (2005-11-01), Hart et al.
patent: 10 2004 014 487 (2005-11-01), None
S.J. Ahn et al., “Highly Manufacturable High Density Phase Change Memory of 64 Mb and Beyond”, IEDM 2004.
H. Horrii et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, VLSI, 2003.
Y.N. Hwang et al., “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24μm-CMOS Technologies”, VLSI, 2003.
Stefan Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications”, IEDM, 2001.
Y.H. Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, VLSI, 2003.
F. Pellizzer et al., “Novel μTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications”, VLSI, 2004.

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