Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-04-12
2011-04-12
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257SE45002
Reexamination Certificate
active
07923712
ABSTRACT:
A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.
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CN1—200610001614.7 Prior Art Reference Cited 200610001614—SIPO—DETAIL.
Stefan Lai et al. in “Current Status of the Phase Change Memory and its Future” Electron Devices Meeting, 2003. IEDM 2003 Technical Digest. IEEE International Dec. 8-10, 2003.
Arnold John Christopher
Clevenger Lawrence Alfred
Dalton Timothy Joseph
Gaidis Michael Christopher
Hon Wong Keith Kwong
Ahmed Selim
International Business Machines - Corporation
Jones II Graham S.
Morris Daniel P.
Purvis Sue
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