Phase-change memory element and method of storing data therein

Details Phase-change memory element and method of storing data therein Phase-change memory element and method of storing data therein

2005-02-22

2005-02-22

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S113000, C365S100000

Reexamination Certificate

active

06859390

ABSTRACT:
A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold voltage. The threshold voltages may be used to determine the current memory state of the memory element. The phase-change material may include a chalcogen element.

REFERENCES:
patent: 6487113 (2002-11-01), Park et al.
patent: 6590807 (2003-07-01), Lowrey

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