Phase change memory element and method of making the same

Details Phase change memory element and method of making the same Phase change memory element and method of making the same

2007-01-29

2008-11-25

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27078

Reexamination Certificate

active

07456460

ABSTRACT:
Thin-film phase-change memories having small phase-change switching volume formed by overlapping thing films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.

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