Phase change memory devices using magnetic resistance...

Details Phase change memory devices using magnetic resistance... Phase change memory devices using magnetic resistance...

2008-05-13

2008-05-13

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000, C257SE45002, C438S142000, C438S197000, C438S238000

Reexamination Certificate

active

07372125

ABSTRACT:
A phase change memory device includes a substrate, a switching element formed in the substrate and a storage node connected to the switching element. The storage node may include a lower electrode connected to the switching element, a first phase change layer formed on the lower electrode, a magnetic resistance layer formed on the first phase change layer, a second phase change layer formed on the magnetic resistance layer and an upper electrode formed on the second phase change layer.

REFERENCES:
patent: 2004/0095801 (2004-05-01), Stipe

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