Phase change memory devices including memory elements having...

Details Phase change memory devices including memory elements having... Phase change memory devices including memory elements having...

2006-05-09

2006-05-09

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S002000, C257SE45002

Reexamination Certificate

active

07042001

ABSTRACT:
A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

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Stefan Lai and Tyler Lowrey, “OUM—A 180 nm Non-Volatile Memory Cell Element Technology For Stand Alone and Embedded Applications,” 2001 International Electron Devices Meeting, Dec. 5, 2001, Ftpi//download.intel.com/research/silicon/oum—pres.pdf.
Stefan Lai and Tyler Lowrey; “OUM—A 180 nm Non-Volatile Memory Cell Element Technology For Stand Alone and Embedded Applications,” 2001 International Electron Devices Meeting 01-803 IEEE pp. 36.5.1-36.5.4.
Notice to Submit a Response for Korean Patent Application No. 10-2004-0005649 mailed on Nov. 28, 2005.
English Translation of Notice to Submit a Response for Korean Patent Application No. 10-2004-0005649 mailed on Nov. 28 2005.

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