Phase change memory devices employing cell diodes and...

Details Phase change memory devices employing cell diodes and... Phase change memory devices employing cell diodes and...

2005-12-30

2008-09-23

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S103000, C257SE21659

Reexamination Certificate

active

07427531

ABSTRACT:
Phase change memory devices having cell diodes and related methods are provided, where the phase change memory devices include a semiconductor substrate of a first conductivity type and a plurality of parallel word lines disposed on the semiconductor substrate, the word lines have a second conductivity type different from the first conductivity type and have substantially flat top surfaces, a plurality of first semiconductor patterns are one-dimensionally arrayed on each word line along a length direction of the word line, the first semiconductor patterns have the first conductivity type or the second conductivity type, second semiconductor patterns having the first conductivity type are stacked on the first semiconductor patterns, an insulating layer is provided on the substrate having the second semiconductor patterns, the insulating layer fills gap regions between the word lines, gap regions between the first semiconductor patterns and gap regions between the second semiconductor patterns, a plurality of phase change material patterns are two-dimensionally arrayed on the insulating layer, and the phase change material patterns are electrically connected to the second semiconductor patterns, respectively.

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US20030186481 is English Abstract corresponding to CN1449021.
US20030058686 is English Abstract corresponding to CN1411000.

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