Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-09
2011-08-09
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S004000, C257SE29003, C257SE47001
Reexamination Certificate
active
07994493
ABSTRACT:
Phase change memory devices may include a semiconductor substrate of a first conductivity type and a plurality of parallel word lines disposed on the semiconductor substrate. The word lines may have a second conductivity type different from the first conductivity type and substantially flat top surfaces. First and second semiconductor patterns may be sequentially stacked on each word line, and an insulating layer may be provided to fill gap regions between the word lines, gap regions between the first semiconductor patterns and gap regions between the second semiconductor patterns. A plurality of phase change material patterns may be two-dimensionally arrayed on the insulating layer and electrically connected to the second semiconductor patterns.
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Byun Hyun-Geun
Cho Beak-hyung
Cho Woo-Yeong
Kang Sang-Beom
Kim Du-Eung
Bernstein Allison P
Muir Patent Consulting, PLLC
Phung Anh
Samsung Electronics Co,. Ltd.
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