Phase change memory devices and their methods of fabrication

Details Phase change memory devices and their methods of fabrication Phase change memory devices and their methods of fabrication

2006-03-28

2009-10-06

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S003000

Reexamination Certificate

active

07598112

ABSTRACT:
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A hole penetrates the first interlayer insulating layer. A first and a second semiconductor pattern are sequentially stacked in a lower region of the hole. A cell electrode is provided on the second semiconductor pattern. The cell electrode has a lower surface than a top surface of the first interlayer insulating layer. A confined phase change material pattern fills the hole on the cell electrode. An upper electrode is disposed on the phase change material pattern. The phase change material pattern in the hole is self-aligned with the first and second semiconductor patterns by the hole. A method of fabricating the phase change memory device is also provided.

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Machine Translation of KR 10-2005-0015564.
Office Action of the IPO issued Sep. 10, 2008 in ROC (Taiwan) Patent Application No. 095114046.

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