Phase change memory devices and methods of forming the same

Details Phase change memory devices and methods of forming the same Phase change memory devices and methods of forming the same

2011-05-10

2011-05-10

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S103000, C257S003000, C257S004000

Reexamination Certificate

active

07939366

ABSTRACT:
A method of forming a phase change memory device includes forming a core pattern on a substrate, conformally forming a heat conductive layer on the substrate including the core pattern, anisotropically etching the heat conductive layer down to a top surface of the core pattern to form a heat electrode surrounding a sidewall of the core pattern, and forming a phase change memory pattern connected to a top surface of the heat electrode.

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