Phase change memory devices and methods for manufacturing...

Details Phase change memory devices and methods for manufacturing... Phase change memory devices and methods for manufacturing...

2007-05-08

2009-08-04

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S536000, C257SE21495, C365S046000, C365S100000

Reexamination Certificate

active

07569909

ABSTRACT:
Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device comprises a substrate. A dielectric layer is formed over the substrate and a phase change material layer is embedded in the dielectric layer. A first conductive electrode is also embedded in the dielectric layer to penetrate the phase change material layer and extends perpendicular to a top surface of the dielectric layer.

REFERENCES:
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patent: 2008/0251778 (2008-10-01), Chen et al.
patent: 2008/0268565 (2008-10-01), Lung
patent: 2009/0026439 (2009-01-01), Park et al.

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