Phase change memory devices and fabrication methods thereof

Details Phase change memory devices and fabrication methods thereof Phase change memory devices and fabrication methods thereof

2006-01-23

2008-11-11

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S597000, C257SE21068

Reexamination Certificate

active

07449360

ABSTRACT:
In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.

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patent: 6413812 (2002-07-01), Harshfield
patent: 6545903 (2003-04-01), Wu
patent: 7259023 (2007-08-01), Kuo et al.
patent: 2005/0112896 (2005-05-01), Hamann et al.
patent: 2006/0281216 (2006-12-01), Chang et al.

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