Phase change memory devices

Details Phase change memory devices Phase change memory devices

2011-03-22

2011-03-22

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S001000, C257S002000, C257S003000, C257S004000, C257SE29170, C257SE27004, C257SE45004

Reexamination Certificate

active

07910913

ABSTRACT:
A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

REFERENCES:
patent: 6586761 (2003-07-01), Lowrey
patent: 7037749 (2006-05-01), Horii et al.
patent: 7321130 (2008-01-01), Lung et al.
patent: 7432206 (2008-10-01), Lung
patent: 2007/0018149 (2007-01-01), Sato
patent: 2007/0108429 (2007-05-01), Lung
patent: 2004-0083144 (2004-10-01), None
Korean Office Action dated Jun. 5, 2008.

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