Phase change memory device with reduced unit cell size and...

Details Phase change memory device with reduced unit cell size and... Phase change memory device with reduced unit cell size and...

2007-07-16

2009-08-04

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C257S002000, C438S095000

Reexamination Certificate

active

07570512

ABSTRACT:
A phase change memory device includes: a semiconductor substrate having active areas; a pair of word lines formed over the active areas and connected with each other at each end thereof; source areas formed in the respective active areas at both sides of the pair of word lines; drain areas formed in the respective active areas between the word lines of the pair of word lines connected with each other at each end thereof; ground lines and cell selection lines formed so as to make contact with the respective source areas respectively; lower electrodes formed so as to make contact with the drain areas; phase change layers and upper electrodes stacked over the respective lower electrodes; and bit lines formed over upper portion of the active areas so as to make contact to the upper electrodes.

REFERENCES:
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 1020040104834 (2004-12-01), None

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