Phase-change memory device with error correction capability

Details Phase-change memory device with error correction capability Phase-change memory device with error correction capability

2011-01-11

2011-01-11

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S189140, C365S185090

Reexamination Certificate

active

07869269

ABSTRACT:
A phase-change memory device includes a plurality of data PCM cells for storing data bits; data decoding circuits for selectively addressing sets of data PCM cells; and data read/program circuits for reading and programming the selected data PCM cells. The device further includes a plurality of parity PCM cells for storing parity bits associated with data bits stored in the data PCM cells; parity decoding circuits for selectively addressing sets of parity PCM cells; and parity read/program circuits for reading and programming the selected parity PCM cells.

REFERENCES:
patent: 7304877 (2007-12-01), Ko et al.
patent: 2005/0055621 (2005-03-01), Adelmann et al.
patent: 2008/0094869 (2008-04-01), Osada et al.
patent: 1 708 202 (2006-10-01), None

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