Phase change memory device with bit line discharge path

Details Phase change memory device with bit line discharge path Phase change memory device with bit line discharge path

2011-05-17

2011-05-17

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S210100

Reexamination Certificate

active

07944739

ABSTRACT:
A phase change memory device includes a cell array. The cell array includes a phase change resistance cell formed at an intersection of a word line and a bit line and a dummy cell configured to discharge the bit line in response to a bit line discharge signal in a precharge mode. A column switching unit is configured to selectively control a connection between the bit line and a global bit line in response to a column selecting signal.

REFERENCES:
patent: 6879513 (2005-04-01), Ooishi
patent: 6909656 (2005-06-01), Moore et al.
patent: 7248494 (2007-07-01), Oh et al.
patent: 7688622 (2010-03-01), Kang et al.
patent: 2003/0067321 (2003-04-01), Turner
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2004/0257854 (2004-12-01), Chen et al.
patent: 2005/0201182 (2005-09-01), Osada et al.
patent: 2006/0250863 (2006-11-01), Nakai et al.
patent: 2007/0103972 (2007-05-01), Ro et al.
patent: 2007-0060685 (2007-06-01), None
patent: 2007-0073304 (2007-07-01), None

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