Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is selenium or tellurium in elemental form
Reexamination Certificate
2006-08-30
2009-06-16
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is selenium or tellurium in elemental form
C257SE21068, C257SE21075, C438S102000
Reexamination Certificate
active
07547913
ABSTRACT:
Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-xphase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-xin the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
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Choi Kyu Jeong
Lee Nam Yeal
Lee Seung Yun
Park Young Sam
Ryu Sang Ouk
Dang Trung
Electronics and Telecommunications Research Institute
Rabin & Berdo P.C.
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