Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
07053431
ABSTRACT:
A phase-change memory device includes memory cells, a memory cell array, a first electrode layer, a word line, and a bit line. The memory cell includes a phase-change layer formed on a semiconductor substrate. The memory cell array has the memory cells arranged in a matrix. The phase change layer includes first regions which contact the semiconductor substrate in units of memory cells and a second region which connects the first regions arranged in a same column. The first electrode layer is formed on the second region. A contact area of each first region and the semiconductor substrate is smaller than a contact area of the second region and the first electrode layer. The bit line is electrically connected to the first electrode layer. The bit line is connects in common the phase-change layers of the memory cells arranged in the same column.
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Kabushiki Kaisha Toshiba
Nelms David
Nguyen Thinh T
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