Phase change memory device providing compensation for...

Details Phase change memory device providing compensation for... Phase change memory device providing compensation for...

2007-07-17

2007-07-17

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S189070

Reexamination Certificate

active

11319266

ABSTRACT:
A semiconductor memory device includes a plurality of phase change memory cells connected to the same bitline and different respective word lines. A read operation is performed on one of the memory cells by selecting the bitline and a corresponding wordline. While the read operation is performed, leakage current produced by non-selected memory cells is detected by a leakage detecting circuit and compensated by a leakage current supply circuit.

REFERENCES:
patent: 6937507 (2005-08-01), Chen
patent: 2004/0190351 (2004-09-01), Kaisha

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