Phase-change memory device including nanowires and method of...

Details Phase-change memory device including nanowires and method of... Phase-change memory device including nanowires and method of...

2006-05-08

2009-08-04

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257SE45002, C977S762000

Reexamination Certificate

active

07569846

ABSTRACT:
A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.

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Wolf et al.. “Silicon Processing for the VLSI Era: vol. 2, Process Integration.” Lattice Press, Sunset Beach. 1990. p. 253.

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