Phase change memory device having semiconductor laser unit

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S148000

Reexamination Certificate

active

07417891

ABSTRACT:
Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

REFERENCES:
patent: 5831960 (1998-11-01), Jiang et al.
patent: 6834027 (2004-12-01), Sakaguchi et al.
patent: 2002-279710 (2002-09-01), None
patent: 2005-244235 (2005-09-01), None
patent: 1020040045636 (2004-06-01), None

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