Phase change memory device having phase change material...

Details Phase change memory device having phase change material... Phase change memory device having phase change material...

2009-03-06

2011-11-01

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE45002, C977S943000

Reexamination Certificate

active

08049202

ABSTRACT:
A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing phase change nano particles interposed between the first electrode and the second electrode and/or a switching device electrically connected to the first electrode. The phase change material layer may include an insulating material.

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